FGA50N100BNTD2 datasheet, igbt equivalent, Fairchild Semiconductor

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Features and benefits

* High Speed Switching
* Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60 A
* High Input Impedance
* Built-in Fast Recovery Diode
* RoHS Compliant .

Application

* UPS, Welder November 2013 General Description Using Fairchild's proprietary trench design and advanced NPT techno.

Description

Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for h.

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