The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
FGA30T65SHD 650 V, 30 A Field Stop Trench IGBT
FGA30T65SHD
650 V, 30 A Field Stop Trench IGBT
December 2014
Features
• Maximum Junction Temperature : TJ =175oC • Positive Temperature Co-efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 30 A • 100% of the Parts Tested for ILM(1) • High Input Impedance • Fast Switching • Tighten Parameter Distribution • RoHS Compliant
General Description
Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.