* Max Junction Temperature 175 oC
* Avalanche Rated 180 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
.

* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits July 2016 Description SiC Schottky.

SiC Schottky Diode has no switching loss, provides improved system efficiency against Si diodes by utilizing new semiconductor material - Silicon Carbide, enables higher operating frequency, and helps increasing power density and reduction of system .

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