FFA60UP20DN Datasheet | Fairchild Semiconductor

Features - Ultrafast with soft recovery (@ IF = 1A), < 40ns - Reverse Voltage, 200V - Forward Voltage (@ TC = 100°C), < 1V TO-3P Applications - - - - Power switching circuits Output rectifiers Freewheeling diodes Switching mode power supply 1 2 3 1. Anode 2.Cathode 3. Anode Absolute Maximum Ratings Symbol VRRM IF(AV) IFSM TJ, TSTG (per diode) TC=25°C unless otherwise noted Value 200 @ TC = 100°C 30 300 - 65 to +150 Units V A A °C Parameter Peak Repetitive Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature Thermal Characteristics Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case (per diode) TC=25 °C unless otherwise noted Min. TC = 25 °C TC = 100 °C TC = 25 °C TC = 100 °C 2 Typ. 32 2.4 38.4 Max. 1.15 1.0 µA 10 100 40 ns A n C ns m J Units V Value 1.4 Units °C/W Electrical Characteristics Symbol VFM - Parameter Maximum Instantaneous Forward Voltage IF = 30A IF = 30A Maximum Instantaneous Reverse Current @ rated VR Reverse Recovery Time Reverse Recovery Current Reverse Recovery Charge (IF =30A, di/dt = 200A/µs) Maximum Reverse Recovery Time (IF =1A, di/dt = 100A/µs) Avalanche Energy (L=40m H) - trr Irr Qrr trr WAVL - Pulse Test: Pulse Width=300µs, Duty Cycle=2% ©2004 Fairchild Semiconductor Corporation Rev. A, August 2004 Typical Characteristics TC = 100 C TC = 100 C 10 o o Reverse Current , I R [µA] Forward Current , IF [A] TC = 25 C...