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FDZ208P - P-Channel 30 Volt PowerTrench

Description

Combining Fairchild’s advanced 30 Volt P-Channel Trench II Process with ± 25 Volts Vgs.

Abs.

Max Gate Rating for the ultimate low Rds Battery Protection MOSFET.

Features

  • 12.5 A,.
  • 30 V. RDS(ON) = 10.5 mΩ @ VGS =.
  • 10 V RDS(ON) = 16.5 mΩ @ VGS =.
  • 4.5 V.
  • Occupies only 14 mm2 of PCB area. Only 42% of the area of SO-8.
  • Ultra-thin package: less than 0.80 mm height when mounted to PCB.
  • 3.5 x 4 mm2 footprint.
  • High power and current handling capability General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDZ208P January 2003 FDZ208P P-Channel 30 Volt PowerTrench   BGA MOSFET Features • –12.5 A, –30 V. RDS(ON) = 10.5 mΩ @ VGS = –10 V RDS(ON) = 16.5 mΩ @ VGS = –4.5 V • Occupies only 14 mm2 of PCB area. Only 42% of the area of SO-8 • Ultra-thin package: less than 0.80 mm height when mounted to PCB • 3.5 x 4 mm2 footprint • High power and current handling capability General Description Combining Fairchild’s advanced 30 Volt P-Channel Trench II Process with ± 25 Volts Vgs. Abs. Max Gate Rating for the ultimate low Rds Battery Protection MOSFET. This MOSFET also embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON).
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