Datasheet Summary
August 2000 PRELIMINARY
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V
- 8V).
Features
- - 9.2 A,
- 20 V. RDS(ON) = 0.012 Ω @ VGS =
- 4.5 V RDS(ON) = 0.015 Ω @ VGS =
- 2.5 V RDS(ON) = 0.0215 Ω @ VGS =
- 1.8 V
Applications
- Load switch
- Motor drive
- DC/DC conversion
- Power management
- Rds ratings for use with 1.8 V logic
- Low gate charge
- High performance trench technology for extremely low RDS(ON)
- Low profile TSSOP-8...