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FDW252P - P-Channel 2.5V Specified PowerTrench MOSFET

General Description

This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.

12V).

Key Features

  • 8.8 A,.
  • 20 V. RDS(ON) = 0.012 Ω @ VGS =.
  • 4.5 V RDS(ON) = 0.018 Ω @ VGS =.
  • 2.5 V Extended VGSS range (±12V) for battery.

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FDW252P June 2000 PRELIMINARY FDW252P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features • –8.8 A, –20 V. RDS(ON) = 0.012 Ω @ VGS = –4.5 V RDS(ON) = 0.018 Ω @ VGS = –2.