FDW252P Datasheet | Fairchild Semiconductor

June 2000 PRELIMINARY P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V - 12V). Features - - 8.8 A, - 20 V. RDS(ON) = 0.012 Ω @ VGS = - 4.5 V RDS(ON) = 0.018 Ω @ VGS = - 2.5 V Extended VGSS range (±12V) for battery applications Low gate charge High performance trench technology for extremely low RDS(ON) Low profile TSSOP-8 package - Applications - - - - Load switch Motor drive DC/DC conversion Power management - - - D S S D G S S D Pin...