FDU044AN03L Datasheet | Fairchild Semiconductor

Features - r DS(ON) = 3.6mΩ (Typ.), VGS = 4.5V, ID = 35A - Qg(5) = 48n C (Typ.), VGS = 5V - Low Miller Charge - Low QRR Body Diode - UIS Capability (Single Pulse and Repetitive Pulse) - Qualified to AEC Q101 Applications - 12V Automotive Load Control - Starter / Alternator Systems - Electronic Power Steering Systems - ABS - DC-DC Converters I-PAK (TO-251AA) G D S D-PAK TO-252 (TO-252) MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC < 168o C, VGS = 10V) ID Continuous (TC < 167o C, VGS = 4.5V) Continuous (Tamb = 25o C, VGS = 10V, with Rθ JA = 52o C/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25o C Operating and Storage Temperature 35 35 21 Figure 4 690 160 1.07 -55 to 175 A A A A m J W W/o C o C Ratings 30 ±20 Units V V Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case TO-252, TO-251 Thermal Resistance Junction to Ambient TO-252, TO-251 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 0.94 100 52 o o C/W C/W o C/W This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://.aecouncil./ Reliability data can be found at: http://.fairchildsemi./products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2003 Fairchild Semiconductor Corporation FDD044AN03L / FDU044AN03L Rev. B1 FDD044AN03L / FDU044AN03L Package Marking and Ordering Information Device Marking FDD044AN03L FDU044AN03L Device FDD044AN03L FDU044AN03L Package TO-252AA TO-251AA Reel Size 13” Tube Tape Width 12mm N/A Quantity 2500 units 75 units Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off...