FDU044AN03L Datasheet | Fairchild Semiconductor

FDD044AN03L / FDU044AN03L December 2003 FDD044AN03L / FDU044AN03L N-Channel PowerTrench® MOSFET 30V, 35A, 4.4mΩ Features - rDS(ON) = 3.6mΩ (Typ.), VGS = 4.5V, ID = 35A - Qg(5) = 48nC (Typ.), VGS = 5V - Low Miller Charge - Low QRR Body Diode - UIS Capability (Single Pulse and Repetitive Pulse) - Qualified to AEC Q101 Applications - 12V Automotive Load Control - Starter / Alternator Systems - Electronic Power Steering Systems - ABS - DC-DC Converters G S D I-PAK (TO-251AA) G D S G D D-PAK TO-252 (TO-252) S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC < 168oC, VGS = 10V) ID Continuous (TC < 167oC, VGS = 4.5V) Continuous (Tamb = 25oC, VGS = 10V, with Rθ JA = 52oC/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 35 35 21 Figure 4 690 160 1.07 -55 to 175 A A A A mJ W W/oC oC Ratings 30 ±20 Units V V Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case TO-252, TO-251 Thermal Resistance Junction to Ambient TO-252, TO-251 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 0.94 100 52 o o...