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FDS9958_F085 - Dual P-Channel PowerTrench MOSFET

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Description

Max rDS(on) =105mΩ at VGS = -10V, ID = -2.9A. Max rDS(on) =135mΩ at VGS = -4.5V, ID = -2.5A. Qualified to AEC Q101. RoHS Compliant These P-channel logic level specified MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.These devices are well suited for portable electronics applications: l.

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Dual P-Channel PowerTrench MOSFET Fairchild Semiconductor
Fairchild Semiconductor FDS9958_F085-like datasheet

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