FDS8978 mosfet equivalent, n-channel powertrench mosfet.
* rDS(on) = 18mΩ, VGS = 10V, ID = 7.5A
* rDS(on) = 21mΩ, VGS = 4.5V, ID = 6.9A
* High performance trench technology for extremely low rDS(on)
* Low gate c.
* DC/DC converters
D2 5 D2 6
Q2
4 G2 3 S2
SO-8 Pin 1
S2 G2 G1 S1
D1 D1
MOSFET Maximum Ratings TA = 25°C unles.
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching s.
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