FDS8858CZ mosfet equivalent, mosfet.
Q1: N-Channel
* Max rDS(on) = 17mΩ at VGS = 10V, ID = 8.6A
* Max rDS(on) = 20mΩ at VGS = 4.5V, ID = 7.3A
Q2: P-Channel
* Max rDS(on) = 20.5mΩ at VGS = -10V, I.
where low in-line power loss and fast switching are required.
Applications
* Inverter
* Synchronous Buck
SO-8
.
These dual N and P-Channel enhancement mode power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
The.
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