FDS8858CZ - MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDS8858CZ
Manufacturer	Fairchild Semiconductor
File Size	293.50 KB
Description	MOSFET
Datasheet	FDS8858CZ Datasheet
Additional preview pages of the FDS8858CZ datasheet.

Product details

Description

These dual N and P-Channel enhancement mode power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Inverter Synchronous Buck SO-8 D2 D2 D1 D1 Pin 1 G2

Features

Q1: N-Channel.
Max rDS(on) = 17mΩ at VGS = 10V, ID = 8.6A.
Max rDS(on) = 20mΩ at VGS = 4.5V, ID = 7.3A Q2: P-Channel.
Max rDS(on) = 20.5mΩ at VGS = -10V, ID = -7.3A.
Max rDS(on) = 34.5mΩ at VGS = -4.5V, ID = -5.6A.
High power and handing capability in a widely used surface mount package.
Fast switching speed General.

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Published: Jan 11, 2017 |