FDS8858CZ
Features
Q1: N-Channel
- Max r DS(on) = 17mΩ at VGS = 10V, ID = 8.6A
- Max r DS(on) = 20mΩ at VGS = 4.5V, ID = 7.3A
Q2: P-Channel
- Max r DS(on) = 20.5mΩ at VGS = -10V, ID = -7.3A
- Max r DS(on) = 34.5mΩ at VGS = -4.5V, ID = -5.6A
- High power and handing capability in a widely used surface mount package
- Fast switching speed
General Description
These dual N and P-Channel enhancement mode power MOSFETs are produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Applications
- Inverter
- Synchronous Buck
SO-8
D2 D2 D1
D1
Pin...
