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FDS8840NZ - N-Channel MOSFET

General Description

The FDS8840NZ has been designed to minimize losses in power conversion application.

Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.

Synchronous Buck for Vcore and Server

Key Features

  • Max rDS(on) = 4.5 mΩ at VGS = 10 V, ID = 18.6 A.
  • Max rDS(on) = 6.0 mΩ at VGS = 4.5 V, ID = 14.9 A.
  • HBM ESD protection level of 6 kV typical(note 3).
  • High performance trench technology for extremely low rDS(on) and fast switching.
  • High power and current handling capability.
  • Termination is Lead-free and RoHS Compliant General.

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Full PDF Text Transcription (Reference)

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FDS8840NZ N-Channel Power Trench® MOSFET April 2009 FDS8840NZ N-Channel PowerTrench® MOSFET 40 V, 18.6 A, 4.5 mΩ Features „ Max rDS(on) = 4.5 mΩ at VGS = 10 V, ID = 18.6 A „ Max rDS(on) = 6.0 mΩ at VGS = 4.5 V, ID = 14.9 A „ HBM ESD protection level of 6 kV typical(note 3) „ High performance trench technology for extremely low rDS(on) and fast switching „ High power and current handling capability „ Termination is Lead-free and RoHS Compliant General Description The FDS8840NZ has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.