FDS7096N Datasheet | Fairchild Semiconductor

Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features - 14 A, 30 V RDS(ON) = 9 mΩ @ VGS = 10 V RDS(ON) = 12 mΩ @ VGS = 4.5 V - High performance trench technology for extremely low RDS(ON) - High power and current handling capability - Fast switching - FLMP SO-8 package: Enhanced thermal performance in industry-standard package size Applications - - - DC/DC converter Power management Load switch 5 6 7 8 Bottom-side Drain Contact 4 3 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25o C unless otherwise noted Parameter Ratings 30 ±20 (Note 1a) Units V V A W °C 14 60 3.0 1.5 - 55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 40 0.5 °C/W Package Marking and Ordering Information Device Marking FDS7096N3 2004 Fairchild Semiconductor Corporation Device...