FDS7082N3 mosfet equivalent, 30v n-channel powertrench mosfet.
* 17.5 A, 30 V RDS(ON) = 6 mΩ @ VGS = 10 V RDS(ON) = 8 mΩ @ VGS = 4.5 V
* High performance trench technology for extremely low RDS(ON)
* Low Qg and Rg for fas.
in both isolated and non-isolated topologies. It is also well suited for both high and low side switch applications in P.
This N-Channel MOSFET in the thermally enhanced SO8 FLMP package has been designed specifically to improve the overall efficiency of DC/DC converters. Providing a balance of low RDS(ON) and Qg it is ideal for synchronous rectifier applications in bot.
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