FDS6930B mosfet equivalent, dual n-channel mosfet.
* 5.5 A, 30 V. RDS(ON) = 38 mΩ @ VGS = 10 V RDS(ON) = 50 mΩ @ VGS = 4.5 V
* Fast switching speed
* Low gate charge
* High performance trench technology fo.
where low in-line power loss and fast switching are required.
D2 D2 D1
D1
SO-8 Pin 1
G2 S2 G1 S1
5
4
6
3
7
2
8.
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are wel.
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