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FDS6912 Datasheet Dual N-channel Logic Level Pwm Optimized Powertrench MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDS6912 January 2000 FDS6912 Dual N-Channel Logic Level PWM Optimized PowerTrench.

General Description

These N-Channel Logic Level MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs

Key Features

  • RDS(ON) = 0.028 Ω @ VGS = 10 V.
  • 6 A, 30 V. RDS(ON) = 0.042 Ω @ VGS = 4.5 V.
  • Optimized for use in switching DC/DC converters with PWM controllers.
  • Very fast switching.
  • Low gate charge D1 D1 D2 D2 S1 G1 5 6 7 Q1 4 3 2 Q2 SO-8 S2 8 1 G2 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current.
  • Continuous.
  • Pulsed TA=25 C unless otherwise noted o Parameter Ratings 30 ±20 (Note 1a) Units V.

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Similar Datasheet

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