Datasheet Summary
November 1999
Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Features
- 7.5 A, 20 V. RDS(ON) = 0.018 Ω
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@ VGS = 4.5 V RDS(ON) = 0.022 Ω @ VGS = 2.5 V. Low gate charge (23nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability.
Applications
- DC/DC converter
- Motor drives
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D2 D1 D1 S2 G2 D2
5 6 7 8 4 3 2 1...
