Datasheet4U Logo Datasheet4U.com

FDS6890A - Dual N-Channel MOSFET

General Description

These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Key Features

  • 7.5 A, 20 V. RDS(ON) = 0.018 Ω.
  • @ VGS = 4.5 V RDS(ON) = 0.022 Ω @ VGS = 2.5 V. Low gate charge (23nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDS6890A Dual N-Channel MOSFET ON Semiconductor
FDS6898A Dual N-Channel MOSFET ON Semiconductor
FDS6898A N-Channel MOSFET Freescale
FDS6898AZ-F085 Dual N-Channel MOSFET ON Semiconductor
FDS6875 Dual P-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (onsemi)

Part Number Description
FDS6892A Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6892AZ Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6894A Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6894AZ Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6898A Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDS6890A November 1999 FDS6890A Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • 7.5 A, 20 V. RDS(ON) = 0.018 Ω • • @ VGS = 4.5 V RDS(ON) = 0.022 Ω @ VGS = 2.5 V. Low gate charge (23nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability.