FDS6890A Datasheet | Fairchild Semiconductor

November 1999 Dual N-Channel 2.5V Specified Power Trench TM MOSFET General Description These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features - 7.5 A, 20 V. RDS(ON) = 0.018 Ω - - @ VGS = 4.5 V RDS(ON) = 0.022 Ω @ VGS = 2.5 V. Low gate charge (23n C typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. Applications - DC/DC converter - Motor drives - - D2 D1 D1 S2 G2 D2 5 6 7 8 4 3 2 1 pin 1 G1...