FDS6875 Overview
Key Specifications
Package: SOIC
Mount Type: Surface Mount
Pins: 8
Height: 1.75 mm
Description
These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits.
Key Features
- RDS(ON) = 0.030 Ω @ VGS = -4.5 V, RDS(ON) = 0.040 Ω @ VGS = -2.5 V
- Low gate charge (23nC typical)
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
