FDS6875 mosfet equivalent, dual p-channel mosfet.
-6 A, -20 V. RDS(ON) = 0.030 Ω @ VGS = -4.5 V, RDS(ON) = 0.040 Ω @ VGS = -2.5 V. Low gate charge (23nC typical). High performance trench technology for extremely low RDS(.
load switching and power management, battery charging and protection circuits.
Features
-6 A, -20 V. RDS(ON) = 0.030 Ω.
These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
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