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FDS6875 Datasheet, Fairchild Semiconductor

FDS6875 mosfet equivalent, dual p-channel mosfet.

FDS6875 Avg. rating / M : 1.0 rating-11

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FDS6875 Datasheet

Features and benefits

-6 A, -20 V. RDS(ON) = 0.030 Ω @ VGS = -4.5 V, RDS(ON) = 0.040 Ω @ VGS = -2.5 V. Low gate charge (23nC typical). High performance trench technology for extremely low RDS(.

Application

load switching and power management, battery charging and protection circuits. Features -6 A, -20 V. RDS(ON) = 0.030 Ω.

Description

These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

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FDS6875 Page 1 FDS6875 Page 2 FDS6875 Page 3

TAGS

FDS6875
Dual
P-Channel
MOSFET
FDS6812A
FDS6814
FDS6815
Fairchild Semiconductor

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