* RDS(ON) = 11.5mΩ, VGS = 10V, ID = 9A
* RDS(ON) = 14.5mΩ, VGS = 4.5V, ID = 8.2A
* High performance trench technology for extremely low RDS(ON)
* Low gate.

* DC/DC converters DD D D SO-8 S SSG 54 63 72 81 ©2010 Fairchild Semiconductor Corporation FDS6692A Rev. A2 1 .

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching s.

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