FDS6162N7
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
Features
- 23 A, 20 V RDS(ON) = 3.5 mΩ @ VGS = 4.5 V RDS(ON) = 5.0 mΩ @ VGS = 2.5 V
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
- Fast switching
- FLMP SO-8 package: Enhanced thermal performance in industry-standard package size
Applications
- Synchronous rectifier
- DC/DC converter
5 6 7 8
Bottom-side Drain Contact
4 3 2 1
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous
- Pulsed Power Dissipation
TA=25o C unless otherwise noted
Parameter
Ratings
20 ± 12
(Note 1a)
Units
V V A W °C
23 60 3.0
- 55 to +150
(Note 1a)
Operating and...
