FDS6162N3 Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
FDS6162N3 Key Features
- 21 A, 20 V RDS(ON) = 4.5 mΩ @ VGS = 4.5 V RDS(ON) = 6.0 mΩ @ VGS = 2.5 V
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
- Fast switching
- FLMP SO-8 package: Enhanced thermal performance in industry-standard package size