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FDS6162N3 - N-Channel MOSFET

FDS6162N3 Description

FDS6162N3 May 2003 FDS6162N3 20V N-Channel PowerTrench MOSFET General .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional sw.

FDS6162N3 Features

* 21 A, 20 V RDS(ON) = 4.5 mΩ @ VGS = 4.5 V RDS(ON) = 6.0 mΩ @ VGS = 2.5 V
* High performance trench technology for extremely low RDS(ON)
* High power and current handling capability
* Fast switching
* FLMP SO-8 package: Enhanced thermal performance in industr

FDS6162N3 Applications

* Synchronous rectifier
* DC/DC converter 5 6 7 8 Bottom-side Drain Contact 4 3 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuous
* Pulsed Power Dissipation TA=25oC unless otherwise no

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