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FDS4935A - Dual 30V P-Channel MOSFET

General Description

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.

20V).

Key Features

  • 7 A,.
  • 30 V RDS(ON) = 23 mΩ @ VGS =.
  • 10 V RDS(ON) = 35 mΩ @ VGS =.
  • 4.5 V.
  • Low gate charge (15nC typical).
  • Fast switching speed.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability.

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FDS4935A March 2002 FDS4935A Dual 30V P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 20V). Features • –7 A, –30 V RDS(ON) = 23 mΩ @ VGS = –10 V RDS(ON) = 35 mΩ @ VGS = –4.