FDS4897C
Description
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
Application
- Inverter
- Power Supplies
Features
- Q1: N-Channel
6.2A, 40V
RDS(on) = 29mΩ @ VGS = 10V RDS(on) = 36mΩ @ VGS = 4.5V
- Q2: P-Channel
- 4.4A,
- 40V RDS(on) = 46mΩ @ VGS =
- 10V RDS(on) = 63mΩ @ VGS =
- 4.5V
- High power handling capability in a widely used surface mount package
- Ro HS pliant
DD2 DD2 DD1 DD1
SO-8
Pin 1 SO-8
G2
S2 G
G1
S1 S
Q2
Q1
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS VGSS...
