FDS4885C Datasheet | Fairchild Semiconductor

.. January 2005 Dual N & P-Channel Power Trench® MOSFET General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features - Q1: N-Channel RDS(on) = 22mΩ @ VGS = 10V RDS(on) = 35mΩ @ VGS = 7V - Q2: P-Channel RDS(on) = 31mΩ @ VGS = - 10V RDS(on) = 42mΩ @ VGS = - 4.5V - - Fast switching speed High power and handling capability in a widely used surface mount package 7.5A, 40V - 6A, - 40V Applications - - Synchronous rectifier Backlight inverter stage D1 D D1 D DD2 D2 D 5 6 Q2 4 3 Q1 SO-8 Pin 1 SO-8 G1 S1 S G2 S2 G 7 8 2...