FDS4780
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Features
- 10.8 A, 40 V. RDS(ON) = 10.5 mΩ @ VGS = 10 V
- Low gate charge (30 n C)
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
Applications
- DC/DC converter
D D SO-8
DD D D
5 6 7
4 3 2 1
Pin 1 SO-8
G G S S S S S S
TA=25o C unless otherwise noted
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous
- Pulsed
Parameter
Ratings
40 ± 20
(Note 1a)
Units
10.8 45 2.5 1.4 1.2
- 55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJA RθJA RθJC Thermal Resistance,...
