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Fairchild Semiconductor Electronic Components Datasheet

FDS4559 Datasheet

60V Complementary PowerTrench MOSFET

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April 2002
FDS4559
60V Complementary PowerTrenchMOSFET
General Description
This complementary MOSFET device is produced using
Fairchild’s advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance.
Applications
DC/DC converter
Power management
LCD backlight inverter
Features
Q1: N-Channel
4.5 A, 60 V
RDS(on) = 55 m@ VGS = 10V
RDS(on) = 75 m@ VGS = 4.5V
Q2: P-Channel
–3.5 A, –60 V RDS(on) = 105 m@ VGS = –10V
RDS(on) = 135 m@ VGS = –4.5V
DD2
DD2
DD1
DD1
SO-8
Pin 1 SO-8
G2
S2 G
G1
S1 S
S
S
Q2
5
6
Q1
7
8
4
3
2
1
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1a)
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS4559
FDS4559
13”
Q1 Q2
60 –60
±20 ±20
4.5 –3.5
20 –20
2
1.6
1.2
1
-55 to +175
78
40
Units
V
V
A
W
°C
°C/W
°C/W
Tape width
12mm
Quantity
2500 units
2000 Fairchild Semiconductor Corporation
FDS4559 Rev C1(W)


Fairchild Semiconductor Electronic Components Datasheet

FDS4559 Datasheet

60V Complementary PowerTrench MOSFET

No Preview Available !

Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Type Min Typ Max Units
Drain-Source Avalanche Ratings (Note 1)
WDSS
Single Pulse Drain-Source VDD = 30 V,
Avalanche Energy
IAR Maximum Drain-Source
Avalanche Current
ID = 4.5 A
Off Characteristics
BVDSS
Drain-Source Breakdown
Voltage
BVDSS
TJ
IDSS
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
IGSS Gate-Body Leakage
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = –250 µA
ID = 250 µA, Referenced to 25°C
ID = –250 µA, Referenced to 25°C
VDS = 48 V, VGS = 0 V
VDS = –48 V, VGS = 0 V
VGS = +20 V, VDS = 0 V
VGS = +20 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on)
On-State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VDS = VGS, ID = –250 µA
ID = 250 µA, Referenced to 25°C
ID = –250 µA, Referenced to 25°C
VGS = 10 V, ID = 4.5 A
VGS = 10 V, ID = 4.5 A, TJ = 125°C
VGS = 4.5 V, ID = 4 A
VGS = –10 V, ID = –3.5 A
VGS = –10 V, ID = –3.5 A, TJ = 125°C
VGS = –4.5 V, ID = –3.1 A
VGS = 10 V, VDS = 5 V
VGS = –10 V, VDS = –5 V
VDS = 10 V, ID = 4.5 A
VDS = –5 V, ID = –3 5 A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer
Capacitance
Q1
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Q2
VDS = –30 V, VGS = 0 V,
f = 1.0 MHz
Q1
Q1
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
90 mJ
4.5 A
60
–60
58
–49
V
mV/°C
1
–1
+100
+100
µA
nA
1 2.2 3
–1 –1.6 –3
V
–5.5
4
mV/°C
42 55 m
72 94
55 75
82 105
130 190
105 135
20
–20
14
9
A
S
650 pF
759
80 pF
90
35 pF
39
Switching Characteristics
td(on) Turn-On Delay Time
tr Turn-On Rise Time
(Note 2)
Q1
VDD = 30 V, ID = 1 A,
VGS = 10V, RGEN = 6
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Q2
VDD = –30 V, ID = –1 A,
VGS = –10 V, RGEN = 6
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Q1
VDS = 30 V, ID = 4.5 A, VGS = 10 V
Q2
VDS = –30 V, ID = –3.5 A, VGS = –10V
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
11 20
7 14
8 18
10 20
19 35
19 34
6 15
12 22
12.5 18
15 21
2.4
2.5
2.6
3.0
ns
ns
ns
ns
nC
nC
nC
FDS4559 Rev C1(W)


Part Number FDS4559
Description 60V Complementary PowerTrench MOSFET
Maker Fairchild Semiconductor
Total Page 8 Pages
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