FDS4488 N-Channel MOSFET
• 7.9 A, 30 V. RDS(ON) = 22 mΩ @ V GS = 10 V RDS(ON) = 30 mΩ @ V GS = 4.5 V
• Low gate charge (9.5 nC typical)
• High performance trench technology for extre.
where low inline power loss and fast switching are required.
Features
• 7.9 A, 30 V. RDS(ON) = 22 mΩ @ V GS = 10 V .
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