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Fairchild Semiconductor Electronic Components Datasheet

FDS4480 Datasheet

40V N-Channel PowerTrench MOSFET

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February 2002
FDS4480
40V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
Applications
DC/DC converter
Features
10.8 A, 40 V. RDS(ON) = 12 m@ VGS = 10 V
Low gate charge (29 nC)
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability
DD
DD
DD
DD
SO-8
Pin 1 SO-8 SSSS SS GG
54
63
72
81
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS4480
FDS4480
13’’
Ratings
40
+30/–20
10.8
45
2.5
1.4
1.2
–55 to +175
50
125
25
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
©2002 Fairchild Semiconductor Corporation
FDS4480 Rev D (W)


Fairchild Semiconductor Electronic Components Datasheet

FDS4480 Datasheet

40V N-Channel PowerTrench MOSFET

No Preview Available !

Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
EAS
Drain-Source Avalanche Energy
Single Pulse, VDD=40V, ID=10.8A
IAS Drain-Source Avalanche Current
240 mJ
10.8 A
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 32 V, VGS = 0 V
VGS = 30 V, VDS = 0 V
VGS = –20 V, VDS = 0 V
40
V
42 mV/°C
1
100
–100
µA
nA
nA
On Characteristics (Note 2)
VGS(th)
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source On–Resistance
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 10.8 A
VGS = 10 V,ID = 10.8 A, TJ=125°C
2
3.9 5
V
–8 mV/°C
8 12 m
13 21
ID(on)
On–State Drain Current
VGS = 10 V, VDS = 5 V
22
A
gFS Forward Transconductance
VDS = 10 V, ID = 10.8 A
36 S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 20 V, V GS = 0 V,
f = 1.0 MHz
1686
384
185
pF
pF
pF
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
VDD = 20 V, ID = 1 A,
VGS = 10 V, RGEN = 6
VDS = 20 V, ID = 10.8 A,
VGS = 10 V
12 22
9 18
30 48
15 27
29 41
17
4
ns
ns
ns
ns
nC
nC
nC
FDS4480 Rev D (W)


Part Number FDS4480
Description 40V N-Channel PowerTrench MOSFET
Maker Fairchild Semiconductor
Total Page 6 Pages
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