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FDS4470 - N-Channel MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

DC/DC converter Feat

Key Features

  • 12.5 A, 40 V. RDS(ON) = 9 mΩ @ VGS = 10 V.
  • Low gate charge (45 nC).
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability DD DD DD DD SO-8 Pin 1 SO-8 SS SS SS GG 5 4 6 3 7 2 8 1 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
  • Continuous.
  • Pulsed (Note 1a) PD Power Dissipation for Sin.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDS4470 December 2006 FDS4470 40V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Applications • DC/DC converter Features • 12.5 A, 40 V.