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Fairchild Semiconductor Electronic Components Datasheet

FDS3992 Datasheet

N-Channel PowerTrench MOSFET 100V/ 4.5A/ 62m

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September 2002
FDS3992
N-Channel PowerTrench® MOSFET
100V, 4.5A, 62m
Features
• rDS(ON) = 54m(Typ.), VGS = 10V, ID = 4.5A
• Qg(tot) = 11nC (Typ.), VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
• Optimized efficiency at high frequencies
• UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82745
Applications
DC/DC converters and Off-Line UPS
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier
Direct Injection / Diesel Injection Systems
42V Automotive Load Control
Electronic Valve Train Systems
Branding Dash
(1) (8)
(2) (7)
1
2
3
4
SO-8
5
(3) (6)
(4) (5)
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TA = 25oC, VGS = 10V, RθJA = 50oC/W)
Continuous (TA = 100oC, VGS = 10V, RθJA = 50oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
Operating and Storage Temperature
Ratings
100
±20
4.5
2.8
Figure 4
167
2.5
20
-55 to 150
Units
V
V
A
A
A
mJ
W
mW/oC
oC
Thermal Characteristics
RθJA
RθJA
RθJC
Thermal Resistance, Junction to Ambient at 10 seconds (Note 3)
Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3)
Thermal Resistance, Junction to Case (Note 2)
50 oC/W
85 oC/W
25 oC/W
Package Marking and Ordering Information
Device Marking
FDS3992
Device
FDS3992
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
©2002 Fairchild Semiconductor Corporation
FDS3992 Rev. B


Fairchild Semiconductor Electronic Components Datasheet

FDS3992 Datasheet

N-Channel PowerTrench MOSFET 100V/ 4.5A/ 62m

No Preview Available !

Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
VDS = 80V
VGS = 0V
TC = 150oC
VGS = ±20V
100
-
-
-
Typ Max Units
- -V
-1
µA
- 250
- ±100 nA
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
rDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250µA
ID = 4.5A, VGS = 10V
ID = 2A, VGS = 6V
ID = 4.5A, VGS = 10V,
TC = 150oC
2 - 4V
- 0.054 0.062
-
0.072 0.108
- 0.107 0.123
Dynamic Characteristics
CISS
COSS
CRSS
Qg(TOT)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain MillerCharge
VDS = 25V, VGS = 0V,
f = 1MHz
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 50V
ID = 4.5A
Ig = 1.0mA
-
-
-
-
-
-
-
-
750 -
118 -
27 -
11 15
1.4 1.9
3.5 -
2.1 -
2.8 -
pF
pF
pF
nC
nC
nC
nC
nC
Switching Characteristics (VGS = 10V)
tON Turn-On Time
td(ON)
Turn-On Delay Time
tr Rise Time
td(OFF)
Turn-Off Delay Time
tf Fall Time
tOFF
Turn-Off Time
VDD = 50V, ID = 4.5A
VGS = 10V, RGS = 27
- - 47 ns
- 8 - ns
- 23 - ns
- 28 - ns
- 26 - ns
- - 81 ns
Drain-Source Diode Characteristics
VSD
trr
QRR
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD = 4.5A
ISD = 2A
ISD= 4.5A, dISD/dt= 100A/µs
ISD= 4.5A, dISD/dt= 100A/µs
-
-
-
-
- 1.25 V
- 1.0 V
- 48 ns
- 65 nC
Notes:
1: Starting TJ = 25°C, L = 37mH, IAS = 3A.
2: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
3:
drain
RθJA
ipsinmse. aRsuθrJeCdiswgituha1ra.0ntiene2dcobpypdeersoignnFwRh-4ilebRoaθrCdA
is determined by the users board design.
©2002 Fairchild Semiconductor Corporation
FDS3992 Rev. B


Part Number FDS3992
Description N-Channel PowerTrench MOSFET 100V/ 4.5A/ 62m
Maker Fairchild Semiconductor
Total Page 11 Pages
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