FDS3912 Datasheet PDF - Fairchild Semiconductor N-Channel MOSFET Specs

FDS3912 - N-Channel MOSFET

Datasheet Summary

Description

These N-Channel MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

Features

3 A, 100 V. RDS(ON) = 125 mΩ @ VGS = 10 V RDS(ON) = 135 mΩ @ VGS = 6 V.
Fast switching speed.
Low gate charge (14 nC typ).
High performance trench technology for extremely low RDS(ON).
High power and current handling capability 5 6 7 8 Q2 Q1 4 3 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current.
Continuous.
Pulsed TA=25 C unless otherwise noted o Parameter Ratings 100 ±.

Datasheet Details

Part number	FDS3912
Manufacturer	Fairchild Semiconductor
File Size	125.32 KB
Description	N-Channel MOSFET
Datasheet	FDS3912 Datasheet
Additional preview pages of the FDS3912 datasheet.

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Full PDF Text Transcription

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FDS3912 October 2001 FDS3912 100V Dual N-Channel PowerTrench® MOSFET General Description These N-Channel MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 3 A, 100 V.

Published: Mar 30, 2005 |