FDS3912
Description
These N-Channel MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with parable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features
- 3 A, 100 V. RDS(ON) = 125 mΩ @ VGS = 10 V RDS(ON) = 135 mΩ @ VGS = 6 V
- Fast switching speed
- Low gate charge (14 n C typ)
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
5 6 7 8
Q2 Q1
4 3 2 1
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous
- Pulsed
TA=25 C unless otherwise noted o
Parameter
Ratings
100 ±20
(Note 1a)
Units
3 20 2
Power Dissipation for Dual Operation Power...
