FDS3912
Description
These N-Channel MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
Key Features
- 3 A, 100 V. RDS(ON) = 125 mΩ @ VGS = 10 V RDS(ON) = 135 mΩ @ VGS = 6 V
- Fast switching speed
- Low gate charge (14 nC typ)
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
