FDS3682 Datasheet | Fairchild Semiconductor

September 2002 N-Channel Power Trench® MOSFET 100V, 6A, 35mΩ Features - r DS(ON) = 30mΩ (Typ.), VGS = 10V, ID = 6A - Qg(tot) = 19n C (Typ.), VGS = 10V - Low Miller Charge - Low QRR Body Diode - Optimized efficiency at high frequencies - UIS Capability (Single Pulse and Repetitive Pulse) Applications - DC/DC converters and Off-Line UPS - Distributed Power Architectures and VRMs - Primary Switch for 24V and 48V Systems - High Voltage Synchronous Rectifier - Direct Injection / Diesel Injection Systems - 42V Automotive Load Control Formerly developmental type 82755 - Electronic Valve Train Systems Branding Dash 4 3 2 1 6 7 1 2 3 4 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID Continuous (TA = 25o C, VGS = 10V, R θJA = 50o C/W) Continuous (TA = 100 C, VGS = 10V, Rθ JA = 50 C/W) Pulsed E AS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25o C Operating and Storage Temperature o o SO-8 Ratings 100 ±20 6.0 3.7 Figure 4 156 2.5 20 -55 to 150 Units V V A A A m J W m W/o C o Thermal Characteristics Rθ JA Rθ JA Rθ JC Thermal Resistance, Junction to Ambient at 10 seconds (Note 3) Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3) Thermal Resistance, Junction to Case (Note 2) 50 80 25 o C/W C/W o C/W...