FDS3601 Datasheet PDF - Fairchild Semiconductor N-Channel MOSFET Specs

FDS3601 - N-Channel MOSFET

Datasheet Summary

Description

These N-Channel MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

Features

1.3 A, 100 V. RDS(ON) = 480 mΩ @ VGS = 10 V RDS(ON) = 530 mΩ @ VGS = 6 V.
Fast switching speed.
Low gate charge (3.7nC typical).
High performance trench technology for extremely low RDS(ON).
High power and current handling capability D1 D1 D2 D2 S1 G1 5 6 7 Q1 4 3 2 Q2 SO-8 S2 8 1 G2 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current.
Continuous.
Pulsed TA=25oC unless other.

Datasheet Details

Part number	FDS3601
Manufacturer	Fairchild Semiconductor
File Size	89.16 KB
Description	N-Channel MOSFET
Datasheet	FDS3601 Datasheet
Additional preview pages of the FDS3601 datasheet.

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Full PDF Text Transcription

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FDS3601 August 2001 FDS3601 100V Dual N-Channel PowerTrench MOSFET General Description These N-Channel MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 1.3 A, 100 V. RDS(ON) = 480 mΩ @ VGS = 10 V RDS(ON) = 530 mΩ @ VGS = 6 V • Fast switching speed • Low gate charge (3.

Published: Mar 30, 2005 |