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FDR6678A - N-Channel MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Key Features

  • 7.5 A, 30 V. RDS(ON) = 24 mΩ @ VGS = 4.5V RDS(ON) = 20 mΩ @ VGS = 10 V.
  • High performance trench technology for extremely low RDS(ON).
  • Fast switching, low gate charge.
  • High power and current in a smaller footprint than SO-8.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDR6678A April 2000 PRELIMINARY FDR6678A 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “high side” synchronous rectifier operation, providing an extremely low RDS(ON) and fast switching in a small package. Features • 7.5 A, 30 V. RDS(ON) = 24 mΩ @ VGS = 4.