FDR6678A Datasheet | Fairchild Semiconductor

Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “high side” synchronous rectifier operation, providing an extremely low RDS(ON) and fast switching in a small package. Features - 7.5 A, 30 V. RDS(ON) = 24 mΩ @ VGS = 4.5V RDS(ON) = 20 mΩ @ VGS = 10 V - High performance trench technology for extremely low RDS(ON) - Fast switching, low gate charge - High power and current in a smaller footprint than SO-8 Applications - DC/DC converter 5 6 4 3 2 1 Super SOT -8 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25o C unless otherwise noted Parameter Ratings 30 ±12 (Note 1a) Units 7.5 40 1.8 1.0 0.9 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 70...