FDR6674A Key Features
- 11.5 A, 30 V. RDS(ON) = 9.5 mΩ @ VGS = 4.5 V RDS(ON) = 8.5 mΩ @ VGS = 10 V
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability in a smaller footprint than SO8
| Manufacturer | Part Number | Description |
|---|---|---|
Analog Devices |
FDR6674A | N-Channel MOSFET |