FDPF5N50 datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

* RDS(on) = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2.5A
* Low gate charge ( Typ. 11nC)
* Low Crss ( Typ. 5pF)
* Fast switching
* 100% avalanche tested
* I.

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

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