FDPF19N40 datasheet, mosfet equivalent, Fairchild Semiconductor

Features and benefits

* RDS(on) =0.2Ω ( Typ.)@ VGS = 10V, ID = 9.5A
* Low Gate Charge ( Typ. 32nC)
* Low Crss ( Typ. 20pF)
* Fast Switching
* 100% Avalanche Tested
* Im.

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

Image gallery