FDP7N50F mosfet equivalent, n-channel mosfet.
* RDS(on) = 0.95Ω ( Typ.)@ VGS = 10V, ID = 3A
* Low gate charge ( Typ. 15nC)
* Low Crss ( Typ. 6.3pF)
* Fast switching
* 100% avalanche tested
* I.
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switchi.
Image gallery
TAGS
Download (Size : 567.39KB)