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Fairchild Semiconductor Electronic Components Datasheet

FDP6670S Datasheet

30V N-Channel PowerTrench SyncFET

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September 2001
FDP6670S/FDB6670S
30V N-Channel PowerTrench® SyncFET
General Description
This MOSFET is designed to replace a single MOSFET
and parallel Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDP6670S includes
an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDP6670S/FDB6670S as the low-side switch in a
synchronous rectifier is indistinguishable from the
performance of the FDP6670A/FDB6670A in parallel
with a Schottky diode.
Features
31 A, 30 V.
RDS(ON) = 8.5 m@ VGS = 10 V
RDS(ON) = 12.5 m@ VGS = 4.5 V
Includes SyncFET Schottky body diode
Low gate charge (23nC typical)
High performance trench technology for extremely
low RDS(ON) and fast switching
High power and current handling capability
DD
G
D
S
TO-220
FDP Series
G
S
TO-263AB
FDB Series
G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1)
(Note 1)
PD
TJ, TSTG
TL
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDB6670S
FDB6670S
13’’
FDP6670S
FDP6670S
Tube
Ratings
30
±20
62
150
62.5
0.5
–55 to +150
275
2.1
62.5
Tape width
24mm
n/a
S
Units
V
V
A
W
W/°C
°C
°C
°C/W
°C/W
Quantity
800 units
45
©2001 Fairchild Semiconductor Corporation
FDP6670S/FDB6670S Rev E(W)


Fairchild Semiconductor Electronic Components Datasheet

FDP6670S Datasheet

30V N-Channel PowerTrench SyncFET

No Preview Available !

Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Drain-Source Avalanche Ratings (Note 1)
W DSS
Single Pulse Drain-Source
Avalanche Energy
VDD = 25 V,
ID = 16.5 A
IAR Maximum Drain-Source Avalanche
Current
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSSF
IGSSR
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
On Characteristics (Note 2)
VGS(th)
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on) On–State Drain Current
gFS Forward Transconductance
VGS = 0 V, ID = 1mA
ID = 26mA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VGS = –20 V, VDS = 0 V
VDS = VGS, ID = 1mA
ID = 26mA, Referenced to 25°C
VGS = 10 V, ID = 31 A
VGS = 4.5 V, ID = 26.5 A
VGS=10 V, ID =31 A, TJ=125°C
VGS = 10 V, VDS = 10 V
VDS = 10 V, ID = 31 A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
Drain–Source Diode Characteristics
VSD Drain–Source Diode Forward
Voltage
trr Diode Reverse Recovery Time
Qrr Diode Reverse Recovery Charge
VDS = 15 V, V GS = 0 V,
f = 1.0 MHz
VDS = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6
VDS = 15 V, ID = 31 A,
VGS = 5 V
VGS = 0 V, IS = 3.5 A
VGS = 0 V, IS = 7 A
IF = 3.5 A,
diF/dt = 300 A/µs
(Note 1)
(Note 1)
(Note 2)
Min Typ Max Units
285
16.5
mJ
A
30 V
24 mV/°C
500
100
–100
µA
nA
nA
1 2.2 3
V
–4.5
mV/°C
5 8.5 m
8 12.5
10 19
60
69
A
S
2639
737
222
pF
pF
pF
13 24
10 21
39 62
35 56
23 32
9
8
ns
ns
ns
ns
nC
nC
nC
0.39
0.48
32
56
0.7
0.9
V
nS
nC
Notes:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2. See “SyncFET Schottky body diode characteristics” below.
FDP6670S/FDB6670S Rev E (W)


Part Number FDP6670S
Description 30V N-Channel PowerTrench SyncFET
Maker Fairchild Semiconductor
Total Page 6 Pages
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