FDP5N50 mosfet equivalent, n-channel mosfet.
* RDS(on) = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2.5A
* Low gate charge ( Typ. 11nC)
* Low Crss ( Typ. 5pF)
* Fast switching
* 100% avalanche tested
* I.
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.
Image gallery
TAGS
Download (Size : 232.56KB)