FDP3632 Datasheet | Fairchild Semiconductor

Features - r DS(ON) = 7.5mΩ (Typ.), V GS = 10V, ID = 80A - Qg(tot) = 84n C (Typ.), VGS = 10V - Low Miller Charge - Low QRR Body Diode - UIS Capability (Single Pulse and Repetitive Pulse) - Qualified to AEC Q101 Formerly developmental type 82784 Applications - DC/DC converters and Off-Line UPS - Distributed Power Architectures and VRMs - Primary Switch for 24V and 48V Systems - High Voltage Synchronous Rectifier - Direct Injection / Diesel Injection Systems - 42V Automotive Load Control - Electronic Valve Train Systems DRAIN (FLANGE) SOURCE DRAIN GATE SOURCE GATE DRAIN (FLANGE) SOURCE DRAIN GATE TO-220AB FDP SERIES TO-263AB FDB SERIES DRAIN (FLANGE) TO-262AB FDI SERIES MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID Continuous (TC < 111o C, VGS = 10V) Continuous (Tamb = 25o C, VGS = 10V, R θJA = 43o C/W) Pulsed E AS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25o C Operating and Storage Temperature 80 12 Figure 4 393 310 2.07 -55 to 175 A A A m J W W/o C o Ratings 100 ±20 Units V V Thermal Characteristics Rθ JC Rθ JA Rθ JA Thermal Resistance Junction to Case TO-220, TO-263, TO-262 Thermal Resistance Junction to Ambient TO-220, TO-262 (Note 2) Thermal Resistance Junction to Ambient TO-263, 1in copper pad area 0.48 62 43 o o o C/W C/W...