FDP12N50 datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

* RDS(on) = 0.55Ω (Typ.)@ VGS = 10V, ID = 6A
* Low gate charge ( Typ. 22nC)
* Low Crss ( Typ. 11pF)
* Fast switching
* 100% avalanche tested
* Imp.

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

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