FDP10N50F mosfet equivalent, mosfet.
* RDS(on) = 0.71Ω ( Typ.) @ VGS = 10V, ID = 4.5A
* Low Gate Charge ( Typ. 18nC)
* Low Crss ( Typ. 10pF)
* Fast Switching
* 100% Avalanche Tested
*.
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switchi.
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