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FDP10N50F - MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • RDS(on) = 0.71Ω ( Typ. ) @ VGS = 10V, ID = 4.5A.
  • Low Gate Charge ( Typ. 18nC).
  • Low Crss ( Typ. 10pF).
  • Fast Switching.
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.
  • RoHS Compliant January 2009 UniFETTM.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDP10N50F / FDPF10N50FT N-Channel MOSFET FDP10N50F / FDPF10N50FT N-Channel MOSFET 500V, 9A, 0.85Ω Features • RDS(on) = 0.71Ω ( Typ.) @ VGS = 10V, ID = 4.5A • Low Gate Charge ( Typ. 18nC) • Low Crss ( Typ. 10pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant January 2009 UniFETTM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.