FDP030N06B_F102 mosfet equivalent, mosfet.
* RDS(on) = 2.67 mΩ (Typ.) @ VGS = 10 V, ID = 100 A
* Low FOM RDS(on) * QG
* Low Reverse-Recovery Charge, Qrr = 78 nC
* Soft Reverse-Recovery Body Diode <.
* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection Circuit
* Motor Drives and U.
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
* Synchronous Rectification .
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