FDN361BN Datasheet | Fairchild Semiconductor

FDN361BN 30V N-Channel, Logic Level, Power Trench“ MOSFET Fe bruary 2009 30V N-Channel, Logic Level, Power Trench“ MOSFET General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are particularly suited for low voltage applications in notebook puters, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package. Features x 1.4 A, 30 V. RDS(ON) = 110 m: @ VGS = 10 V RDS(ON) = 160 m: @ VGS = 4.5 V x Low gate charge x Industry standard outline SOT-23 surface mount package using proprietary Super SOTTM-3 design for superior thermal and electrical capabilities x High performance trench technology for extremely low RDS(ON) Super SOT...