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FDMS9620S - 30V Dual N-Channel PowerTrench MOSFET

Description

This device includes two specialized MOSFETs in a unique dual Power 56 package.

It is designed to provide an optimal Synchronous Buck power stage in terms of efficiency and PCB utilization.

The low switching loss "High Side" MOSFET is complemented by a Low Conduction Loss "Low Side" SyncFET.

Features

  • Q1: N-Channel.
  • Max rDS(on) = 21.5m: at VGS = 10V, ID = 7.5A.
  • Max rDS(on) = 29.5m: at VGS = 4.5V, ID = 6.5A Q2: N-Channel.
  • Max rDS(on) = 13m: at VGS = 10V, ID = 10A.
  • Max rDS(on) = 17m: at VGS = 4.5V, ID = 8.5A.
  • Low Qg high side MOSFET.
  • Low rDS(on) low side MOSFET.
  • Thermally efficient dual Power 56 package.
  • Pinout optimized for simple PCB design.
  • RoHS Compliant General.

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Datasheet Details

Part number FDMS9620S
Manufacturer Fairchild Semiconductor
File Size 350.68 KB
Description 30V Dual N-Channel PowerTrench MOSFET
Datasheet download datasheet FDMS9620S Datasheet
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FDMS9620S Dual N-Channel PowerTrench® MOSFET May 2014 FDMS9620S Dual N-Channel PowerTrench® MOSFET Q1: 30V, 16A, 21.5m: Q2: 30V, 18A, 13m: Features Q1: N-Channel „ Max rDS(on) = 21.5m: at VGS = 10V, ID = 7.5A „ Max rDS(on) = 29.5m: at VGS = 4.5V, ID = 6.5A Q2: N-Channel „ Max rDS(on) = 13m: at VGS = 10V, ID = 10A „ Max rDS(on) = 17m: at VGS = 4.5V, ID = 8.5A „ Low Qg high side MOSFET „ Low rDS(on) low side MOSFET „ Thermally efficient dual Power 56 package „ Pinout optimized for simple PCB design „ RoHS Compliant General Description This device includes two specialized MOSFETs in a unique dual Power 56 package. It is designed to provide an optimal Synchronous Buck power stage in terms of efficiency and PCB utilization.
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