FDMS8680 Datasheet | Fairchild Semiconductor

FDMS8680 N-Channel Power Trench® MOSFET N-Channel Power Trench® MOSFET 30V, 35A, 7.0m: October 2014 tm Features General Description - Max r DS(on) = 7.0m:at VGS = 10V, ID = 14A - Max r DS(on) = 11.0m: at VGS = 4.5V, ID = 11.5A - Advanced Package and Silicon bination for low r DS(on) and high efficiency - MSL1 robust package design - Ro HS pliant The FDMS8680 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been bined to offer the lowest r DS(on) while maintaining excellent switching performance. Applications - Low Side for Synchronous Buck to Power Core Processor - Secondary Side Synchronous Rectifier - Low Side Switch in POL DC/DC Converter - Oring FET/ Load Switch Top Bottom Pin 1 S D5 D6 Power 56 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source...