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FDMS8680 - N-Channel MOSFET

General Description

Max rDS(on) = 7.0m:at VGS = 10V, ID = 14A Max rDS(on) = 11.0m: at VGS = 4.5V, ID = 11.5A Advanced Package and Silicon combination for low rDS(on) and high efficiency MSL1 robust package design RoHS Compliant The FDMS8680 has been designed to minim

Key Features

  • General.

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FDMS8680 N-Channel PowerTrench® MOSFET FDMS8680 N-Channel PowerTrench® MOSFET 30V, 35A, 7.0m: October 2014 tm Features General Description „ Max rDS(on) = 7.0m:at VGS = 10V, ID = 14A „ Max rDS(on) = 11.0m: at VGS = 4.5V, ID = 11.5A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ MSL1 robust package design „ RoHS Compliant The FDMS8680 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.