General Description
* Max rDS(on) = 0.65 mΩ at VGS = 10 V, ID = 55 A
* Max rDS(on) = 0.9 mΩ at VGS = 4.5 V, ID = 47 A
* Advanced Package and Silicon combina.

* OringFET
* Synchronous Rectifier Top Pin 1 Bottom S Pin 1 S S G S S D D D D Power 56 S G D D D D MOSFET.

* Max rDS(on) = 0.65 mΩ at VGS = 10 V, ID = 55 A
* Max rDS(on) = 0.9 mΩ at VGS = 4.5 V, ID = 47 A
* Advanced Package and Silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET has been designed specifically to imp.

FDMS8050

FDMS8050ET30

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