FDMS5352
Description
Max rDS(on) = 6.7m: at VGS = 10V, ID = 13.6A Max rDS(on) = 8.2m: at VGS = 4.5V, ID = 12.3A Advanced Package and Silicon bination for low rDS(on) MSL1 robust package design This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
