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FDMS5352 - N-Channel Power Trench MOSFET

General Description

Max rDS(on) = 6.7m: at VGS = 10V, ID = 13.6A Max rDS(on) = 8.2m: at VGS = 4.5V, ID = 12.3A Advanced Package and Silicon combination for low rDS(on) MSL1 robust package design This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Tr

Overview

FDMS5352 N-Channel Power Trench® MOSFET October 2014 FDMS5352 N-Channel Power Trench® MOSFET 60V, 49A, 6.

Key Features

  • General.