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FDMS2506SDC - N-Channel MOSFET

Description

Dual CoolTM Top Side Cooling PQFN package Max rDS(on) = 1.45 mΩ at VGS = 10 V, ID = 30 A Max rDS(on) = 2.1 mΩ at VGS = 4.5 V, ID = 26 A High performance technology for extremely low rDS(on) SyncFET Schottky Body Diode RoHS Compliant This

Features

  • General.

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Full PDF Text Transcription

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FDMS2506SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM FDMS2506SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM 25 V, 49 A, 1.45 mΩ July 2013 Features General Description „ Dual CoolTM Top Side Cooling PQFN package „ Max rDS(on) = 1.45 mΩ at VGS = 10 V, ID = 30 A „ Max rDS(on) = 2.1 mΩ at VGS = 4.5 V, ID = 26 A „ High performance technology for extremely low rDS(on) „ SyncFET Schottky Body Diode „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
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